Future Electronics Offers IR’s IRFHE4250D FastIRFET™ for Superior Efficiency in DC/DC Applications

Future Electronics has announced immediate shipping availability of the IRFHE4250D FastIRFET™ for superior efficiency in DC/DC applications, from International Rectifier.

31/10/2014 - Pointe Claire, Quebec (newsreleasenetwork) October 28, 2014 - Future Electronics, a global leading distributor of electronic components, has announced immediate shipping availability of the IRFHE4250D FastIRFET for superior efficiency in DC/DC applications, from International Rectifier.

The IRHE4250D is the world's first 25V dual power MOSFET in 6 x 6mm PQFN with exposed top for superior power density. This addition to IR's Power Block family uses its latest 25V FastIRFET silicon technology for best in class switching performance, and the exposed top allows for maximum thermal transfer.

The new IRFHE4250D FastIRFET dual power MOSFET reduces power losses by more than 5% at 25A compared to best in class conventional power block devices. The new 25V device is targeted at 12V input DC/DC synchronous buck applications including advanced telecom and netcom equipment, servers, graphic cards, desktop, ultra book and notebook computers.

The IRFHE4250D features IR's latest generation silicon and expands the power block packaging platform with a 6 x 6mm PQFN package with exposed top and slim profile for backside mounting that combined with excellent thermal performance, low on-state resistance (RDS(ON)) and gate charge (Qg) delivers superior power density and lower switching losses to shrink PCB size and improve overall system efficiency.

As with all IR power block devices, the IRFHE4250D works with any controller or driver to offer design flexibility while delivering higher current, efficiency and frequency capability.

The IRFHE4250D is qualified to industrial grade and moisture sensitivity level 2 (MSL2), and features an environmentally friendly and RoHS compliant bill of materials.

Features include a 60A rated Power Block, low thermal resistance path to the top, control and synchronous MOSFETs in one package, low thermal resistance path to the PCB, slim (<0.75mm) package height for backside mounting, low charge control MOSFET (13nC typical), low RDS(ON) synchronous MOSFET (<1.35m), intrinsic Schottky diode with low forward voltage on Q2, and is RoHS compliant, halogen-free.

Typical applications include DC/DC modules (VIN = 12V nominal), enterprise telecom/netcom (VIN = 12V), servers (VIN = 12V), graphic cards (VIN = 12V), desktops (VIN = 12V), ultrabooks and notebooks (narrow VDC only).

For more information about International Rectifier, IRFHE4250D, Transistor, MOSFETs, or DC-DC Applications, as well as access to the world's largest available-to-sell inventory, visit www.FutureElectronics.com.

About Future Electronics

Future Electronics is a global leader in electronics distribution, ranking 3rd in component sales worldwide, with an impressive reputation for developing efficient, comprehensive global supply chain solutions. Founded in 1968, the company has established itself as one of the most innovative organizations in the industry today, with 5,000 employees in 169 offices in 44 countries around the world. Future Electronics is globally integrated, with one worldwide IT infrastructure providing real-time inventory availability and access, while enabling full integration of its operations, sales and marketing worldwide. Offering the highest level of service, the most advanced engineering capabilities and technical solutions through all stages of the design-production cycle, and the largest available-to-sell inventory in the world, Future's mission is always to Delight the Customer. For more information, visit www.FutureElectronics.com.

Media Contact

Martin H. Gordon
Director, Corporate Communications

514-694-7710 (ext. 2236)
Fax: 514-630-2671


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